规格参数 > 第4326页
CY7C1370BV25-167BZC 现货价格参数; 2510-68K 现货价格参数; 2510-70K 现货价格参数; 70236-134 现货价格参数; CY7C1373BV25-117AC 现货价格参数; CW02BR5000JS73 现货价格参数; 2510-86F 现货价格参数; 7026S35G 现货价格参数; 2510R-00J 现货价格参数; CW02BR5500JE12 现货价格参数;
| 型号 | 生产商 | 产品描述 |
|---|---|---|
| CY7C1370BV25-167BZC | rochester electronics | |
| 2510-68K | api delevan | Ind RF Unshielded Wirewound 68uH 10% 2.5MHz 25Q-Factor Iron 58mA 2510 T/R |
| 2510-70K | api delevan | Ind RF Unshielded Wirewound 82uH 10% 2.5MHz 25Q-Factor Iron 50mA 2510 T/R |
| 70236-134 | fci sa | Conn Hard Metric HDR 8Power POS 2mm Press Fit ST Thru-Hole Tube |
| CY7C1373BV25-117AC | rochester electronics | |
| CW02BR5000JS73 | vishay / dale | Res Wirewound 0.5 Ohm 5% 3W ±90ppm/°C Ceramic Hi Temp Sil AXL Thru-Hole T/R |
| 2510-86F | api delevan | Ind RF Unshielded Wirewound 390uH 1% 790KHz 15Q-Factor Ferrite 30mA 2510 T/R |
| 7026S35G | integrated device technology (idt) | SRAM Chip Async Dual 5V 256K-Bit 16K x 16 35ns 84-Pin CPGA |
| 2510R-00J | api delevan | Ind RF Unshielded Wirewound 100nH 5% 25MHz 25Q-Factor Phenolic 865mA 2510 T/R |
| CW02BR5500JE12 | vishay / dale | Res Wirewound 0.55 Ohm 5% 3W ±90ppm/°C Ceramic Hi Temp Sil AXL Thru-Hole Bulk |
| 70430-104 | fci sa | Conn Hard Metric HDR 8Power POS 2mm Press Fit ST Thru-Hole Tube |
| CY7C1381B-100BZI | rochester electronics | |
| 2510R-08J | api delevan | Ind RF Unshielded Wirewound 220nH 5% 25MHz 25Q-Factor Phenolic 635mA 2510 T/R |
| 70927S20PF | integrated device technology (idt) | 32K X 16 SYNCH DPRAM |
| CW02BR6000HS70 | vishay / dale | Res Wirewound 0.6 Ohm 3% 3W ±90ppm/°C Ceramic Hi Temp Sil AXL Thru-Hole T/R |
| 2510R-24J | api delevan | Ind RF Unshielded Wirewound 1uH 5% 7.9MHz 35Q-Factor Iron 418mA 2510 T/R |
| 70ADH-4-FL0 | bourns | Conn Battery F 4 POS 4mm Solder ST Thru-Hole 4 Terminal 1 Port Tube |
| A22-TB-20M | Omron Industrial | Pushbutton Switches DPST-NO MOM RND BLCK Extended actuator |
| 2510R-44K | api delevan | Ind RF Unshielded Wirewound 6.8uH 10% 7.9MHz 35Q-Factor Iron 114mA 2510 T/R |
| 70M-IDC5G | grayhill | AC and DC Input Module |
| CW02BR7100KE1213 | vishay / dale | Res Wirewound 0.71 Ohm 10% 4W ±90ppm/°C Ceramic Hi Temp Sil AXL Thru-Hole Bulk |
| 2510R-56K | api delevan | Ind RF Unshielded Wirewound 22uH 10% 2.5MHz 25Q-Factor Iron 100mA 2510 T/R |
| CY7C419-20JC | rochester electronics | |
| T01-023002-003-NO-A-1 | ITW Switches | Pushbutton Switches 30mm 5VDC Alternate Action |
| 2510R-68K | api delevan | Ind RF Unshielded Wirewound 68uH 10% 2.5MHz 25Q-Factor Iron 58mA 2510 T/R |
| CW02C300R0HS7014 | vishay / dale | Res Wirewound 300 Ohm 3% 2.5W ±30ppm/°C Ceramic Hi Temp Sil AXL Thru-Hole T/R |
| 70P25L25PFI | integrated device technology (idt) | SRAM Chip Async Dual 1.8V 128K-Bit 8K x 16 25ns 100-Pin TQFP |
| CY8C24123A-24SXIT | cypress semiconductor | PSOC MIXED-SIGNAL ARRAY, 8 SOIC, 4K FLH, -40 TO +85 |
| 2510R-72G | api delevan | Ind RF Unshielded Wirewound 100uH 2% 2.5MHz 25Q-Factor Iron 47mA 2510 T/R |
| 70RCK8-HS | grayhill | ASM I/O RACK 8 50-PIN HEADER WITH EJECTOR LE |
| CW02C330R0HS7314 | vishay / dale | Res Wirewound 330 Ohm 3% 2.5W ±30ppm/°C Ceramic Hi Temp Sil AXL Thru-Hole T/R |
| CY8C24423A-24SXIT | cypress semiconductor | PSOC MIXED-SIGNAL ARRAY, 28 SOIC, 4K FLH, -40 TO +85 |
| 2510R-88K | api delevan | Ind RF Unshielded Wirewound 470uH 10% 790KHz 15Q-Factor Ferrite 28mA 2510 T/R |
| ALZ52B18W | Panasonic Electric Works | General Purpose Relays 1 FORM A 16A 18V CLASS B, SEALED |
| CW02C4R700HS70 | vishay / dale | Res Wirewound 4.7 Ohm 3% 2.5W ±50ppm/°C Ceramic Hi Temp Sil AXL Thru-Hole T/R |
| 2512-273H | api delevan | Ind Power Unshielded Wirewound 27uH 3% 2.5MHz Ferrite 330mA 2512 T/R |
| CYIFS741BSXBT | cypress semiconductor | PREMIS EMI REDUCTION SSCGS |
| 70V06L55PF | integrated device technology (idt) | SRAM Chip Async Dual 3.3V 128K-Bit 16K x 8 55ns 64-Pin TQFP |
| 2512-392F | api delevan | Ind Power Unshielded Wirewound 3.9uH 1% 7.9MHz Ferrite 702mA 2512 T/R |
| 70V06S20J | integrated device technology (idt) | SRAM Chip Async Dual 3.3V 128K-Bit 16K x 8 20ns 68-Pin PLCC |
| CYIFS781BSXCT | cypress semiconductor | PREMIS EMI REDUCTION SSCGS |
| CW02C4R700HS73 | vishay / dale | Res Wirewound 4.7 Ohm 3% 2.5W ±50ppm/°C Ceramic Hi Temp Sil AXL Thru-Hole T/R |
| 2512-682J | api delevan | Ind Power Unshielded Wirewound 6.8uH 5% 7.9MHz Ferrite 580mA 2512 T/R |
| 70V24L35J8 | integrated device technology (idt) | SRAM Chip Async Dual 3.3V 64K-Bit 4K x 16 35ns 84-Pin PLCC T/R |
| 70V3599S166DR | integrated device technology (idt) | SRAM Chip Sync Dual 3.3V 4.5M-Bit 128K x 36 12ns/3.6ns 208-Pin PQFP |
| CW02C50R00HB1214 | vishay / dale | Res Wirewound 50 Ohm 3% 2.5W ±30ppm/°C Ceramic Hi Temp Sil AXL Thru-Hole Bulk |
| 2512-823K | api delevan | Ind Power Unshielded Wirewound 82uH 10% 2.5MHz Ferrite 278mA 2512 T/R |
| CYIFS781BZXCT | cypress semiconductor | PREMIS EMI REDUCTION SSCGS |
| 70V657S10BC | integrated device technology (idt) | SRAM Chip Async Dual 3.3V 1.125M-Bit 32K x 36 10ns 256-Pin CABGA |
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