规格参数 > 第7946页
361M599 现货价格参数; 1N6012UR-1 现货价格参数; GS816118BD-200I 现货价格参数; ERO-25PHF1131 现货价格参数; RWR89S60R0FPB12 现货价格参数; 1N6013UR 现货价格参数; MC74LVX125D 现货价格参数; GS8161Z32BD-150 现货价格参数; RWR89S60R4FSS70 现货价格参数; 1N6016UR-1 现货价格参数;
| 型号 | 生产商 | 产品描述 |
|---|---|---|
| 361M599 | Bomar Interconnect | RF Connectors BNC VERTICAL PC JACK |
| 1N6012UR-1 | microsemi | Diode Zener Single 33V 20% 500mW 2-Pin DO-213AA |
| GS816118BD-200I | gsi technology | SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 6.5ns/3ns 165-Pin FBGA Tray |
| ERO-25PHF1131 | Panasonic Electronic Components | Metal Film Resistors - Through Hole Metal Film Resistor 1/4W 1 Mohms |
| RWR89S60R0FPB12 | vishay / dale | Res Wirewound 60 Ohm 1% 3W ±20ppm/°C 0.1% Ceramic Hi Temp Sil AXL Thru-Hole Bulk |
| 1N6013UR | microsemi | Diode Zener Single 36V 20% 500mW 2-Pin DO-213AA |
| MC74LVX125D | ON Semiconductor | Buffers & Line Drivers 2-3.6V Quad Bus |
| GS8161Z32BD-150 | gsi technology | SRAM Chip Sync Quad 2.5V/3.3V 18M-Bit 512K x 32 7.5ns/3.8ns 165-Pin FBGA Tray |
| RWR89S60R4FSS70 | vishay / dale | Res Wirewound 60.4 Ohm 1% 3W ±20ppm/°C 0.001% Ceramic Hi Temp Sil AXL Thru-Hole T/R |
| 1N6016UR-1 | microsemi | Diode Zener Single 47V 20% 500mW 2-Pin DO-213AA |
| CD19FD162FO3F | Cornell Dubilier | Mica Capacitors 1600pF 500V +/-1% |
| GS8161Z32BD-200 | gsi technology | SRAM Chip Sync Quad 2.5V/3.3V 18M-Bit 512K x 32 6.5ns/3ns 165-Pin FBGA Tray |
| GS8162Z18BD-150 | gsi technology | SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 7.5ns/3.8ns 165-Pin FBGA Tray |
| 929834-05-25-RK | 3M Electronic Solutions Division | Headers & Wire Housings .100 STR 25 PIN .235-.610 |
| 1N6020UR | microsemi | Diode Zener Single 68V 20% 500mW 2-Pin DO-213AA |
| RWR89S6190FMB12 | vishay / dale | Res Wirewound 619 Ohm 1% 3W ±20ppm/°C 1% Ceramic Hi Temp Sil AXL Thru-Hole Bulk |
| GS8320E32GT-166 | gsi technology | SRAM Chip Sync Quad 2.5V/3.3V 32M-Bit 1M x 32 7ns/3.5ns 100-Pin TQFP Tray |
| SMBJ6.0/52 | Vishay Semiconductors | TVS Diodes - Transient Voltage Suppressors 600W 6.0V 10% Unidir |
| 1N6022UR-1 | microsemi | Diode Zener Single 82V 20% 500mW 2-Pin DO-213AA |
| RWR89S6190FSB12 | vishay / dale | Res Wirewound 619 Ohm 1% 3W ±20ppm/°C 0.001% Ceramic Hi Temp Sil AXL Thru-Hole Bulk |
| GS8320EV32GT-133I | gsi technology | SRAM Chip Sync Quad 1.8V 32M-Bit 1M x 32 8.5ns/4ns 100-Pin TQFP Tray |
| ERD-S2TYJ300T | Panasonic Electronic Components | Carbon Film Resistors - Through Hole Carbon Film Resistor Leaded 1/4W 5% |
| GS8320EV36T-250 | gsi technology | SRAM Chip Sync Quad 1.8V 36M-Bit 1M x 36 5.5ns/2.5ns 100-Pin TQFP Tray |
| 1N6023UR-1 | microsemi | Diode Zener Single 91V 20% 500mW 2-Pin DO-213AA |
| RWR89S6190FSS73 | vishay / dale | Res Wirewound 619 Ohm 1% 3W ±20ppm/°C 0.001% Ceramic Hi Temp Sil AXL Thru-Hole T/R |
| 08911922 | Delphi Connection Systems | Automotive Connectors CON 56 630 2W ML |
| GS8320V18T-225I | gsi technology | SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 7ns/2.7ns 100-Pin TQFP Tray |
| 1N6028UR | microsemi | Diode Zener Single 150V 20% 500mW 2-Pin DO-213AA |
| 44WR50LFTB | BI Technologies | Trimmer Resistors - SMD 4MM Squ 50 10% |
| GS8320V36GT-133 | gsi technology | SRAM Chip Sync Quad 1.8V 36M-Bit 1M x 36 8.5ns/4ns 100-Pin TQFP Tray |
| RWR89S6490FSB12 | vishay / dale | Res Wirewound 649 Ohm 1% 3W ±20ppm/°C 0.001% Ceramic Hi Temp Sil AXL Thru-Hole Bulk |
| AXT328114 | Panasonic Electric Works | FFC & FPC Connectors AXT3(P4S) Socket (0.4mm pitch, 28-pin, N |
| GS8320V36GT-150 | gsi technology | SRAM Chip Sync Quad 1.8V 36M-Bit 1M x 36 8.5ns/3.8ns 100-Pin TQFP Tray |
| 1N6031UR-1 | microsemi | Diode Zener Single 200V 20% 500mW 2-Pin DO-213AA |
| RWR89S64R9DRS73 | vishay / dale | Res Wirewound 64.9 Ohm 0.5% 3W ±20ppm/°C 0.01% Ceramic Hi Temp Sil AXL Thru-Hole T/R |
| CHP1206K3301FBT | Vishay/Sfernice | Thick Film Resistors - SMD CHP 1206 100PPM 3K3 1% B TR |
| GS832118GE-150 | gsi technology | SRAM Chip Sync Dual 2.5V/3.3V 36M-Bit 2M x 18 7.5ns/3.8ns 165-Pin FBGA Tray |
| 1N6105US | microsemi | Diode TVS Single Bi-Dir 6.9V 500W 2-Pin E-MELF |
| GS832118GE-150I | gsi technology | SRAM Chip Sync Dual 2.5V/3.3V 36M-Bit 2M x 18 7.5ns/3.8ns 165-Pin FBGA Tray |
| CM06FD911FO3 | Cornell Dubilier | Mica Capacitors 910pF 500V 1% |
| RWR89S64R9DSB12 | vishay / dale | Res Wirewound 64.9 Ohm 0.5% 3W ±20ppm/°C 0.001% Ceramic Hi Temp Sil AXL Thru-Hole Bulk |
| 1N6110US | microsemi | Diode TVS Single Bi-Dir 11.4V 500W 2-Pin E-MELF |
| GS832136E-200 | gsi technology | SRAM Chip Sync Quad 2.5V/3.3V 36M-Bit 1M x 36 6.5ns/3ns 165-Pin FBGA Tray |
| NY491000FA20 | Vishay/Sfernice | Metal Film Resistors - Through Hole T4. 9K1 1% AM500 e3 |
| RWR89S64R9DSS73 | vishay / dale | Res Wirewound 64.9 Ohm 0.5% 3W ±20ppm/°C 0.001% Ceramic Hi Temp Sil AXL Thru-Hole T/R |
| GS8321E32E-150 | gsi technology | SRAM Chip Sync Quad 2.5V/3.3V 32M-Bit 1M x 32 7.5ns/3.8ns 165-Pin FBGA Tray |
| 1N6112 | microsemi | Diode TVS Single Bi-Dir 13.7V 500W 2-Pin Case E |
| CRGH2512F15R4 | TE Connectivity | Thick Film Resistors - SMD CRGH2512 1% 15R4 2W |
| GS8321EV18GE-200 | gsi technology | SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 6.5ns/3ns 165-Pin FBGA Tray |
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