购物车(规格参数 > 第64323页
NE68530-A 现货价格参数; MMA02040E2700BB300 现货价格参数; HUFA75652G3 现货价格参数; CRGV2512J300K 现货价格参数; FDS8958A_NF073 现货价格参数; 4612H-101-154LF 现货价格参数; BSS119 H6327 现货价格参数; LVC06JR500EV 现货价格参数; FDP7030L 现货价格参数; 262-360/REEL-RC 现货价格参数;
| 型号 | 生产商 | 产品描述 |
|---|---|---|
| NE68530-A | NEC/CEL | Transistors RF Bipolar Small Signal NPN High Frequency |
| MMA02040E2700BB300 | Vishay / Beyschlag | MELF Resistors 0.25W 270ohms 0.1% 0204 MELF 200V 15ppm |
| HUFA75652G3 | Fairchild Semiconductor | MOSFET 75a 100V 0.008 Ohm N-Ch MOSFET |
| CRGV2512J300K | TE Connectivity / Holsworthy | Thick Film Resistors - SMD CRGV2512 5% 300K 1600V |
| FDS8958A_NF073 | Fairchild Semiconductor | MOSFET DUAL NCH AND PCH POWER TRENCH MOSFET |
| 4612H-101-154LF | Bourns | Resistor Networks & Arrays 12pins 150Kohms Bussed |
| BSS119 H6327 | Infineon Technologies | MOSFET CHIPLIEFERUNGEN |
| LVC06JR500EV | Ohmite | Current Sense Resistors - SMD 0.25W 0.500 ohms 5% |
| FDP7030L | Fairchild Semiconductor | MOSFET N-Ch PowerTrench Logic Level |
| 262-360/REEL-RC | Xicon | Metal Oxide Resistors 360ohms 5% Tol |
| FQPF27N25T | Fairchild Semiconductor | MOSFET N-CH/250V /27A/QFET |
| SS103VD03CBLLF13 | BI Technologies / TT electronics | Resistor Networks & Arrays 5kohm 20kohm 4 0.25% 0.1% |
| BLA1011-2 | NXP Semiconductors | Transistors RF MOSFET Power BULK TNS-MICP |
| TFH85M2K70JE | Ohmite | Thick Film Resistors - Through Hole 85watt 2.7K 5% 2 Terminal |
| RWM0622N10R0JR15E1 | Vishay / Sfernice | 巻き線型巻線型抵抗器 - スルーホール RWM* 6X22 NI 10U 5% TR1000 e1 |
| FDP4020P | Fairchild Semiconductor | MOSFET P-Ch 2.5V Specified Enhancement Mode |
| BUK9629-100B /T3 | NXP Semiconductors | MOSFET HIGH PERF TRENCHMOS |
| 3852A-283-103AL | Bourns | Potentiometers 10K 3/4 Single Turn |
| HCHP2010K49R3DNT | Vishay | 厚膜抵抗器 - SMD HCHP 2010 100PPM 49U3 0,5% N TR e2 |
| FDU6030BL | Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench |
| CHF2010CNP101RW | Bourns | High Frequency/RF Resistors 10WATT POWER RES 100OHM |
| CRGV2512F133K | TE Connectivity / Holsworthy | Thick Film Resistors - SMD CRGV2512 1% 133K 1600V |
| C1206X223KARAC | Kemet | マルチレイヤーセラミックキャパシタ MLCC - SMD/SMT .022UF 250V |
| SAK-XE164KN-40F80L AA | Infineon Technologies | 16-bit Microcontrollers - MCU 16 BIT FLASH |
| IPU49CN10N G | Infineon Technologies | MOSFET N-CH 100V 20A |
| PTM902-030K-105B2 | Bourns | Potentiometers 1Mohms Dual Gang |
| RLP1020R00DB00 | Vishay | 巻き線型巻線型抵抗器 - スルーホール RLP 10 20U 0,5% BO50NA e1 |
| NTHD3100CT3G | ON Semiconductor | MOSFET 20V +3.9A/-4.4A Complementary |
| 4608H-101-563LF | Bourns | Resistor Networks & Arrays 8pins 56Kohms Bussed |
| BUK9880-55A T/R | NXP Semiconductors | MOSFET TAPE-7 PWR-MOS |
| C1206C332G1GAC | Kemet | マルチレイヤーセラミックキャパシタ MLCC - SMD/SMT 3300PF 100V |
| 4118R-2-203LF | Bourns | Resistor Networks & Arrays 18pin 20Kohms Bussed Low Profile |
| PHB160NQ08T /T3 | NXP Semiconductors | MOSFET TRENCH-75 |
| FDP6030L | Fairchild Semiconductor | MOSFET N-Ch PowerTrench Logic Level |
| NTB13N10T4G | ON Semiconductor | MOSFET 100V 13A N-Channel |
| CRGH2512F226R | TE Connectivity / Holsworthy | Thick Film Resistors - SMD CRGH2512 1% 226R 2W |
| CCF6010K2FKE36 | Vishay / Dale | 金属被膜抵抗器 - スルーホール 1/2watt 10.2Kohms 1% Rated to 1watt |
| H88K06BDBR | TE Connectivity / Holsworthy | Metal Film Resistors - Through Hole H8 0.1% 1/4W 8.06K |
| FQA16N25C | Fairchild Semiconductor | MOSFET 250V N-Channel Advance Q-FET |
| DCP4H05250SL1JKY00 | WIMA | フィルムコンデンサ DC-LINK MKP 4 25.0 uF 450 VDC 20x39.5x41.5 SN |
| EFM32GG295F512 | Silicon Labs | ARM Microcontrollers - MCU 512KB FL 128KB RAM |
| TAP600K5R0E | Ohmite | Planar Resistors - Chassis Mount 600watt 5ohm 10% |
| RK73H2ALTE4991F | KOA Speer | 厚膜抵抗器 - SMD 1/8watt 4.99Kohms 1% |
| SFH9140 | Fairchild Semiconductor | MOSFET P-CH/100V/19A/0.2OHM |
| SS103VD08GSLF13 | BI Technologies / TT electronics | Resistor Networks & Arrays 3.333kohm 10kohm 3 2% |
| PTM902-030K-504B2 | Bourns | Potentiometers 500Kohms Dual Gang |
| FC40SA50FKP | Vishay Semiconductors | MOSFET N-Chan 500V 40 Amp |
| RV1206Y9091BBT | Vishay / Sfernice | 薄膜抵抗器 - SMD RV 1206 10PPM 9K09 0,1% B TR |
| H86K98BDBR | TE Connectivity / Holsworthy | Metal Film Resistors - Through Hole H8 0.1% 1/4W 6.98K |
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