购物车(规格参数 > 第64306页
VJ1206Y104KBBAT4X 现货价格参数; 299-430K/AP-RC 现货价格参数; FDFS6N303 现货价格参数; H8549RBDBR 现货价格参数; HUFA75617D3ST 现货价格参数; CRGV2512F4M87 现货价格参数; FQP6N15 现货价格参数; TS3YJ 20K 20%TR 现货价格参数; RNX038200RFNLBN 现货价格参数; BUK9506-40B 现货价格参数;
| 型号 | 生产商 | 产品描述 |
|---|---|---|
| VJ1206Y104KBBAT4X | Vishay / Vitramon | マルチレイヤーセラミックキャパシタ MLCC - SMD/SMT 100nF 100volts 10% |
| 299-430K/AP-RC | Xicon | Carbon Film Resistors - Through Hole 430Kohms 5% |
| FDFS6N303 | Fairchild Semiconductor | MOSFET N-Channel MOSFET |
| H8549RBDBR | TE Connectivity / Holsworthy | Metal Film Resistors - Through Hole H8 0.1% 1/4W 549 |
| HUFA75617D3ST | Fairchild Semiconductor | MOSFET 16a 100V N-Ch 0.090Ohm |
| CRGV2512F4M87 | TE Connectivity / Holsworthy | Thick Film Resistors - SMD CRGV2512 1% 4M87 1600V |
| FQP6N15 | Fairchild Semiconductor | MOSFET |
| TS3YJ 20K 20%TR | Vishay / Sprague | Trimmer Resistors - SMD TS3YJ203MR15 |
| RNX038200RFNLBN | Vishay / Dale | 酸化被膜抵抗器 200ohms 1% 200ppm 1Watt Max. Non-Ind |
| BUK9506-40B | NXP Semiconductors | MOSFET HIGH PERF TRENCHMOS |
| RCS15RE | Ohmite | Rheostats 7.5watt 15ohm 305V Std Shaft |
| RN731JTTD7591B10 | KOA Speer | 薄膜抵抗器 - SMD 1/16W 7.59K ohm .1% 10ppm |
| IPB08CNE8N G | Infineon Technologies | MOSFET OptiMOS 2 PWR TRANST 85V 95A |
| 273-316K/AP-RC | Xicon | Metal Film Resistors - Through Hole 316Kohms 1% 50PPM |
| 81DA822M063MD2D | Vishay / Sprague | アルミニウム電解キャパシタ - リード線付き SNAP LOCK ALUMINUM |
| FDS4770 | Fairchild Semiconductor | MOSFET 40V N-Ch PowerTrench |
| RN73C2A274RBTDF | TE Connectivity / Holsworthy | Thin Film Resistors - SMD 0.1W .1% 10PPM 274 |
| BUK7575-100A | NXP Semiconductors | MOSFET RAIL PWR-MOS |
| FKP4J031006B00KJ00 | WIMA | フィルムコンデンサ FKP 4 0.1 uF 630 VDC 11x21x31.5 PCM27.5 |
| STFV3N150 | STMicroelectronics | MOSFET N-channel 1500V |
| 4604H-101-332LF | Bourns | Resistor Networks & Arrays 4pins 3.3Kohms Bussed |
| SR732BLTE8R06F | KOA Speer | 電流検出抵抗器 - SMD 8.06ohms 1% 100PPM |
| ES1PB-E3/85A | Vishay Semiconductors | Rectifiers 1.0 Amp 100 Volt 30 Amp IFSM |
| BZX84C6V8_S00Z | Fairchild Semiconductor | Zener Diodes 6.8V 0.35W Zener |
| PTJ902-130F-202B2 | Bourns | Potentiometers 2Kohms Dual Gang Center Detent |
| PHU66NQ03LT | NXP Semiconductors | MOSFET MOSFET |
| DSA200100L | Panasonic | Transistors Bipolar - BJT SM SIG TRANS GL WNG 2.9x2.8mm |
| 4605H-101-274LF | Bourns | Resistor Networks & Arrays 5pins 270Kohms Bussed |
| HUFA75337S3S | Fairchild Semiconductor | MOSFET 75a 55V 0.014Ohm NCh UltraFET |
| PWC-PWC2512-15R0-F | IRC / TT electronics | Thick Film Resistors - SMD 15ohm 1.5watt 0.01 |
| BUK9635-55A /T3 | NXP Semiconductors | MOSFET TAPE13 PWR-MOS |
| BRL3225T330M | Taiyo Yuden | 固定インダクタ INDCTR LW PROFL WND 1210 33uH 20% |
| 4605M-101-100LF | Bourns | Resistor Networks & Arrays 5pins 10ohms Bussed |
| HUFA75631S3ST | Fairchild Semiconductor | MOSFET 33a 100V N-Ch UltraFET |
| SL1R022JT | TE Connectivity | Current Sense Resistors - SMD SL1 R022 5% TAPED |
| SA18CA-E3/4 | Vishay Semiconductors | TVS Diodes - Transient Voltage Suppressors 500W 18V Bidirect |
| 270-698/AP-RC | Xicon | Metal Film Resistors - Through Hole 698ohms 1% 50PPM |
| FQB2N60TM | Fairchild Semiconductor | MOSFET 600V N-Channel QFET |
| 06035A100JA12A | AVX | マルチレイヤーセラミックキャパシタ MLCC - SMD/SMT 50volts 10pF 5% C0G |
| 3852C-203-253AL | Bourns | Potentiometers 25K 3/4 Single Turn |
| NTHD3133PFT3G | ON Semiconductor | MOSFET -20V -4.4A P-CHANNEL W/3.7A SCHOTTKY |
| BAT54-G | Comchip Technology | Schottky Diodes & Rectifiers SCHOTTKY DIODE 200mA 30V |
| SS103VD12CBLLF7 | BI Technologies / TT electronics | Resistor Networks & Arrays 50kohm 100kohm 2 0.25% 0.1% |
| ECE-A1VKG150I | Panasonic | アルミニウム電解キャパシタ - リード線付き Al Lytic Cap 105C Radial KG Series |
| FQB2N50TM | Fairchild Semiconductor | MOSFET 500V N-Channel QFET |
| PTH902-030S-105B2 | Bourns | Potentiometers 1Mohms Dual Gang |
| NDM3000 | Fairchild Semiconductor | MOSFET Motor Driver 3Phase Brushless |
| C0805C393J5RAC | Kemet | マルチレイヤーセラミックキャパシタ MLCC - SMD/SMT .039UF 50.0V |
| PTF180101S V1 | Infineon Technologies | Transistors RF MOSFET Power Hi Pwr RF LDMOS FET 10W 1805-1880 MHz |
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