| 型号 |
生产商 |
产品描述 |
| 3TN11G12.0000NVGC |
integrated device technology (idt) |
CMOS OSCILLATOR |
| E3JU-D2P4-MN1 |
Omron Industrial |
Photoelectric Sensors DIFFUSE 2M FET MINI CONN. |
| 3TN11G12.2880NSGC8 |
integrated device technology (idt) |
CMOS OSCILLATOR |
| L14C2_Q |
Fairchild Semiconductor |
Phototransistors 0.5mA PHOTO TRANS |
| 3TN11G12.2880NSGH |
integrated device technology (idt) |
CMOS OSCILLATOR |
| E3ZM-B81-C 2M |
Omron Industrial |
Photoelectric Sensors PET PNP Prewired 2m w/ Reflcr |
| 3TN11G12.2880NVGC |
integrated device technology (idt) |
CMOS OSCILLATOR |
| 0219.630M- |
Littelfuse |
Cartridge Fuses 250V .63A Slo-Blo |
| 3TN11G12.2880NVGE |
integrated device technology (idt) |
CMOS OSCILLATOR |
| ERJ-T14J3R3U |
Panasonic |
Thick Film Resistors - SMD 1210 3.3ohms 5% Tol |
| 3TN11G12.2880NVGH |
integrated device technology (idt) |
CMOS OSCILLATOR |
| GRM0335C1E6R8CA01J |
Murata Electronics |
マルチレイヤーセラミックキャパシタ MLCC - SMD/SMT 0201 6.8pF 25volts C0G +/-0.25pF |
| 3TN11G125.000NSGC |
integrated device technology (idt) |
CMOS OSCILLATOR |
| E3Z-D61-M5J 0.3M |
Omron Industrial |
Photoelectric Sensors E3Z-D61 w/ 3 pin 8mm conn. |
| 3TN11G125.000NSGE |
integrated device technology (idt) |
CMOS OSCILLATOR |
| CRCW1210536RFKEAHP |
Vishay / Dale |
Thick Film Resistors - SMD 3/4watt 536ohms 1% |
| E3JU-D1P4T-MN1 |
Omron Industrial |
Photoelectric Sensors DIFFUSE 1M FET TIMER MINI CON |
| 3TN11G125.000NSGH |
integrated device technology (idt) |
CMOS OSCILLATOR |
| 0325.400M |
Littelfuse |
Cartridge Fuses 250V .4A Slo-Blo 3AB |
| 3TN11G125.000NSGH8 |
integrated device technology (idt) |
CMOS OSCILLATOR |
| P1206H1000BNT |
Vishay / Thin Film |
薄膜抵抗器 - SMD P 1206 H 1000 B N TR e2 |
| 3TN11G125.000NVGE |
integrated device technology (idt) |
CMOS OSCILLATOR |
| 3TN11G127.000NSGC |
integrated device technology (idt) |
CMOS OSCILLATOR |
| 74AUP1G07GW,125 |
nxp semiconductors |
Buffer/Driver 1-CH Non-Inverting Open Drain CMOS 5-Pin TSSOP T/R |
| 3TN11G127.000NSGE |
integrated device technology (idt) |
CMOS OSCILLATOR |
| 0230.350HXW |
Littelfuse |
Cartridge Fuses 250V .35A Slo-Blo 2AG |
| 3TN11G13.0000NSGE8 |
integrated device technology (idt) |
CMOS OSCILLATOR |
| ORNTA1003BT0 |
Vishay / Thin Film |
Resistor Networks & Arrays 100Kohms 0.1%ABS 0.1%RATIO |
| 3TN11G13.0000NVGE |
integrated device technology (idt) |
CMOS OSCILLATOR |
| E3S-BT11-L |
Omron Industrial |
Photoelectric Sensors PARTS FOR ASMO |
| 0312008.M |
Littelfuse |
Cartridge Fuses 250V 8A Fast Acting |
| 3TN11G13.0000NVGH8 |
integrated device technology (idt) |
CMOS OSCILLATOR |
| RN732BLTD4990D10 |
KOA Speer |
薄膜抵抗器 - SMD 1/8watts 499ohms .5% |
| 3TN11G13.5000NSGE |
integrated device technology (idt) |
CMOS OSCILLATOR |
| TNPW12062083BEEN |
Vishay |
Thin Film Resistors - SMD 208Kohms .1% 25ppm |
| 3TN11G13.5000NSGH8 |
integrated device technology (idt) |
CMOS OSCILLATOR |
| E3S-BT81-D |
Omron Industrial |
Photoelectric Sensors RCVR. FOR E3S-BT81 PHOTO |
| 3TN11G13.5000NVGC8 |
integrated device technology (idt) |
CMOS OSCILLATOR |
| FKP0G002200B00HC00 |
WIMA |
フィルムコンデンサ FKP 02 220 pF 400 VDC 2.5x7x4.6 PCM2.5 |
| 3TN11G13.5000NVGE |
integrated device technology (idt) |
CMOS OSCILLATOR |
| L14G3_Q |
Fairchild Semiconductor |
Phototransistors 12mA PHOTO TRANS |
| 3TN11G13.5600NSGC |
integrated device technology (idt) |
CMOS OSCILLATOR |
| E3JU-R5P1-M1-2 |
Omron Industrial |
Photoelectric Sensors RETRO 5M FET-NPN L-O N MICRO |
| 3TN11G13.5600NSGC8 |
integrated device technology (idt) |
CMOS OSCILLATOR |
| CN1J4ALTD221J |
KOA Speer |
レジスタネットワークおよびアレイ 220ohms 5% CONVEX SQUARE |
| 3TN11G13.5600NSGH8 |
integrated device technology (idt) |
CMOS OSCILLATOR |
| CRGH0603F41R2 |
TE Connectivity / Holsworthy |
Thick Film Resistors - SMD CRGH0603 1% 41R2 0.2W |
| 3TN11G13.5600NVGC8 |
integrated device technology (idt) |
CMOS OSCILLATOR |
| 3TN11G133.300NSGE |
integrated device technology (idt) |
CMOS OSCILLATOR |