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MG1003 现货价格参数; MG1004 现货价格参数; MG1005 现货价格参数; MG1006 现货价格参数; MG1007 现货价格参数; MG1008 现货价格参数; MG1009 现货价格参数; MG1010 现货价格参数; MG1011 现货价格参数; MG1012 现货价格参数;

型号 生产商 产品描述
MG1003 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1004 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1005 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1006 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1007 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1008 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1009 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1010 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1011 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1012 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1013 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1014 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1015 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1016 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1017 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1018 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1019 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1020 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1021 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1022 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1023 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1024 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1025 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1034 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1036 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1037 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1038 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1039 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1040 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1060 Microsemi Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grow
MG1041 Microsemi Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at
MG1042 Microsemi Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at
MG1043 Microsemi Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at
MG1044 Microsemi Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at
MG1045 Microsemi Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at
MG1046 Microsemi Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at
MG1052 Microsemi Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at
MG1054 Microsemi Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at
MG1056 Microsemi Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at
MG1058 Microsemi Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at
MG1059 Microsemi Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at
MV30001 Microsemi Microsemi’s GaAs hyperabrupt junction varactor diodes are fabricated from epitaxial layers grown at
MV30002 Microsemi Microsemi’s GaAs hyperabrupt junction varactor diodes are fabricated from epitaxial layers grown at
MV30003 Microsemi Microsemi’s GaAs hyperabrupt junction varactor diodes are fabricated from epitaxial layers grown at
MV30004 Microsemi Microsemi’s GaAs hyperabrupt junction varactor diodes are fabricated from epitaxial layers grown at
MV30005 Microsemi Microsemi’s GaAs hyperabrupt junction varactor diodes are fabricated from epitaxial layers grown at
MV30006 Microsemi Microsemi’s GaAs hyperabrupt junction varactor diodes are fabricated from epitaxial layers grown at
MV30007 Microsemi Microsemi’s GaAs hyperabrupt junction varactor diodes are fabricated from epitaxial layers grown at
MV30008 Microsemi Microsemi’s GaAs hyperabrupt junction varactor diodes are fabricated from epitaxial layers grown at

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