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A14V60A-TQ176C 现货价格参数; A54SX32A-CQ208B 现货价格参数; SM175PG-ACTEL 现货价格参数; JANTX1N4479US 现货价格参数; 1N5242BDO35E3 现货价格参数; APT30F50B 现货价格参数; APT75GN120JDQ3G 现货价格参数; APT37F50B 现货价格参数; APT8065SVRG 现货价格参数; APTGF180DH60G 现货价格参数;
| 型号 | 生产商 | 产品描述 |
|---|---|---|
| A14V60A-TQ176C | Microsemi SoC | IC FPGA 6K GATES 3.3V 176-TQFP |
| A54SX32A-CQ208B | Microsemi SoC | IC FPGA SX 48K GATES 208-CQFP |
| SM175PG-ACTEL | Microsemi SoC | ADAPTER MODULE ANTIFUSE 175CPGA |
| JANTX1N4479US | Microsemi HI-REL [MIL] | DIODE ZENER 39V 1.5W MELF |
| 1N5242BDO35E3 | Microsemi Commercial Components Group | DIODE ZENER 12V 500MW DO35 |
| APT30F50B | Microsemi Power Products Group | MOSFET N-CH 500V 30A TO-247 |
| APT75GN120JDQ3G | Microsemi Power Products Group | IGBT 1200V 124A 379W SOT227 |
| APT37F50B | Microsemi Power Products Group | MOSFET N-CH 500V 37A TO-247 |
| APT8065SVRG | Microsemi Power Products Group | MOSFET N-CH 800V 13A D3PAK |
| APTGF180DH60G | Microsemi Power Products Group | POWER MODULE IGBT 600V 180A SP6 |
| APTGT50DA170D1G | Microsemi Power Products Group | IGBT 1700V 70A 310W D1 |
| APTM60A23UT1G | Microsemi-PPG | MOSFET MODULE PHASE LEG SP1 |
| 1N5388B | Microsemi Commercial Components Group | DIODE ZENER 200V 5W T-18 |
| LX8384B-15CP | Microsemi Analog Mixed Signal Group | IC REG LDO 1.5V 5A TO220 |
| SG3842DM | Microsemi Analog Mixed Signal Group | IC PWM CURRENT MODE 8SOIC |
| 1.5KE300CA | Microsemi | TRANS VOLT SUPP 300V 1500W BIDIR |
| JANTX1N6047A | Microsemi | Diode TVS Single Bi-Dir 18V 1.5KW 2-Pin DO-13 |
| 1.4KESD48 | Microsemi | Diode TVS Single Uni-Dir 48V 1.4KW 2-Pin DO-35 |
| 1N6068 | Microsemi | Diode TVS Single Bi-Dir 137V 1.5KW 2-Pin DO-13 |
| CD6294CA | Microsemi | Diode TVS Single Bi-Dir 77.8V 1.5KW Die |
| JAN1N6057A | Microsemi | Diode TVS Single Bi-Dir 47V 1.5KW 2-Pin DO-13 |
| JANTX1N6468US | Microsemi | Diode TVS Single Uni-Dir 51.6V 500W 2-Pin MELF |
| MLL1.4KESD100 | Microsemi | Diode TVS Single Uni-Dir 100V 400W 2-Pin DO-213AA |
| SG120-18T | Microsemi | Reg Standard Lin Fix Neg -18V 1.4A 3-Pin TO-39 |
| 2N1807 | Microsemi | Thyristor SCR 700V 1.6KA 2-Pin TO-209AC |
| K21160Z1EB1 | Microsemi | Bridge assemblies up to 1600V and 243A on plate heat sinks |
| MSAER07N80A | Microsemi | |
| SG2845D | Microsemi | Features: OPTIMIZED FOR OFF-LINE CONTROL LOW START-UP CURRENT ( AUTOMATIC FEED FORWARD COMPENS |
| SG7920R-883B | Microsemi | Key Features: Output voltage set internally to ±1.5% on SG7900A Output current to 1.5A Excelle |
| SG140-08IG-883B | Microsemi | |
| 120NQ040 | Microsemi | Config Standard Polarity |
| 2N2060 | Microsemi | FEATURES: UNITIZED DUAL NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/270 |
| GBL2Je3/TU | Microsemi | |
| JHV21H32 | Microsemi | 22A,8KV-80KV high voltage stack |
| JANTXV2N2919U | Microsemi | |
| MXP2001 | Microsemi | Large area diode chip for medium current photovoltaic by-pass applications, or for higher current hy |
| EHS8Z1 | Microsemi | Single and three phase bridges rated 12A (single phase) and 16A (three phase). All rated from 200V-1 |
| LX1994-DU EVAL KIT | Microsemi | Please see LX1994 Datasheet for full details. |
| MS1227 | Microsemi | |
| MV2N5116 | Microsemi | |
| JANS2N3810L | Microsemi | |
| GC84005-00 | Microsemi | The GC84000 series are silicon chip capacitors and utilize silicon nitride as the dielectric layer. |
| MV30013 | Microsemi | Microsemis GaAs hyperabrupt junction varactor diodes are fabricated from epitaxial layers grown at |
| GG75030-05 | Microsemi | |
| 1N1306 | Microsemi | 40A,200V-1200V Standard Recovery Rectifier in DO5 package |
| 1N2818B | Microsemi | These high power 50 W Zener diodes represented by the JEDEC registered 1N2804 thru 1N2846B and 1N455 |
| 1N3209 | Microsemi | 40A,200V-1200V Standard Recovery Rectifier in DO5 package |
| 1N4101UR | Microsemi | The 1N4099UR thru 1N4135UR and 1N4614UR thru 1N4627UR series of 0.5 watt glass surface mount DO-213A |
| JANHCA1N4570A | Microsemi | FEATURES: 1N4565A-1 THRU 1N4584A-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/4 |
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