描述相同 >The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are StealthTM diodes optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost Product Highlights: Soft Recovery . . . . . . . . . . .tb / ta > 5.0 Fast Recovery . . . . . . . . . . . trr < 45ns Operating Temperature . . . . . . . .150°C Reverse Voltage. . . . . . . . . . . 1200V Avalanche Energy Rated产品现货库存报价

The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are StealthTM diodes optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost Product Highlights: Soft Recovery . . . . . . . . . . .tb / ta > 5.0 Fast Recovery . . . . . . . . . . . trr < 45ns Operating Temperature . . . . . . . .150°C Reverse Voltage. . . . . . . . . . . 1200V Avalanche Energy Rated产品现货库存报价